Electron and hole spin relaxation in InP-based self-assembled quantum dots emitting at telecom wavelengths

A. V. Mikhailov, V. V. Belykh, D. R. Yakovlev, P. S. Grigoryev, J. P. Reithmaier, M. Benyoucef, and M. Bayer
Phys. Rev. B 98, 205306 – Published 26 November 2018

Abstract

We investigate the electron and hole spin relaxation in an ensemble of self-assembled InAs/In0.53Al0.24Ga0.23As/InP quantum dots with emission wavelengths around 1.5 μm by using pump-probe Faraday rotation spectroscopy. Electron-spin dephasing due to the randomly oriented nuclear Overhauser fields is observed. At low temperatures we find a submicrosecond longitudinal electron-spin relaxation time T1 which depends unexpectedly strongly on temperature. At high temperatures the electron-spin relaxation time is limited by optical phonon scattering through spin-orbit interaction decreasing down to 0.1 ns at 260 K. We show that the hole spin relaxation is activated much more effectively by a temperature increase compared with the electrons.

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  • Received 26 June 2018
  • Revised 1 November 2018

DOI:https://doi.org/10.1103/PhysRevB.98.205306

©2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

A. V. Mikhailov1,2, V. V. Belykh1,3,*, D. R. Yakovlev1,4, P. S. Grigoryev1,2, J. P. Reithmaier5, M. Benyoucef5, and M. Bayer1,4

  • 1Experimentelle Physik 2, Technische Universität Dortmund, D-44221 Dortmund, Germany
  • 2Spin Optics Laboratory, St. Petersburg State University, 199034 St. Petersburg, Russia
  • 3P.N. Lebedev Physical Institute of the Russian Academy of Sciences, 119991 Moscow, Russia
  • 4Ioffe Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
  • 5Institute of Nanostructure Technologies and Analytics (INA), CINSaT, University of Kassel, D-34132 Kassel, Germany

  • *vasilii.belykh@tu-dortmund.de

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Issue

Vol. 98, Iss. 20 — 15 November 2018

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