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Density functional perturbation theory for gated two-dimensional heterostructures: Theoretical developments and application to flexural phonons in graphene

Thibault Sohier, Matteo Calandra, and Francesco Mauri
Phys. Rev. B 96, 075448 – Published 31 August 2017

Abstract

The ability to perform first-principles calculations of electronic and vibrational properties of two-dimensional heterostructures in a field-effect setup is crucial for the understanding and design of next-generation devices. We present here an implementation of density functional perturbation theories tailored for the case of two-dimensional heterostructures in field-effect configuration. Key ingredients are the inclusion of a truncated Coulomb interaction in the direction perpendicular to the slab and the possibility of simulating charging of the slab via field effects. With this implementation we can access total energies, force and stress tensors, the vibrational properties and the electron-phonon interaction. We demonstrate the relevance of the method by studying flexural acoustic phonons and their coupling to electrons in graphene doped by field effect. In particular, we show that while the electron-phonon coupling to those phonons can be significant in neutral graphene, it is strongly screened and negligible in doped graphene, in disagreement with other recent first-principles reports. Consequently, the gate-induced coupling with flexural acoustic modes would not be detectable in transport measurements on doped graphene.

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  • Received 14 May 2017

DOI:https://doi.org/10.1103/PhysRevB.96.075448

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Thibault Sohier1,*, Matteo Calandra2, and Francesco Mauri3,4

  • 1Theory and Simulation of Materials (THEOS), and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
  • 2IMPMC, CNRS, Université P. et M. Curie, 4 Place Jussieu, 75005 Paris, France
  • 3Departimento di Fisica, Università di Roma La Sapienza, Piazzale Aldo Moro 5, I-00185 Roma, Italy
  • 4Graphene Labs, Fondazione Istituto Italiano di Tecnologia, Italy

  • *Corresponding author: thibault.sohier@epfl.ch

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Issue

Vol. 96, Iss. 7 — 15 August 2017

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