We exploit scanning-probe-controlled domain patterning in a ferroelectric top layer to induce nonvolatile modulation of the conduction characteristic of monolayer ${\mathrm{MoS}}_2$ between a transistor and a junction state. In the presence of a domain wall, ${\mathrm{MoS}}_2$ exhibits rectified $I\text{−}V$ characteristics that are well described by the thermionic emission model. The induced Schottky barrier height ${\mathrm{\Phi }}_B^{\text{eff}}$ varies from 0.38 to 0.57 eV and is tunable by a ${\mathrm{SiO}}_2$ global back gate, while the tuning range of ${\mathrm{\Phi }}_B^{\text{eff}}$ depends sensitively on the conduction-band-tail trapping states. Our work points to a new route to achieving programmable functionalities in van der Waals materials and sheds light on the critical performance limiting factors in these hybrid systems.

• Received 9 September 2016

DOI:https://doi.org/10.1103/PhysRevLett.118.236801