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Title: Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation
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Journal of Applied Physics [0021-8979] yr:2016


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1. Sato, S. "Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots." Journal of applied physics 119.18 (2016): 185702-. Link to SFX for this item
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