Remanent electrical spin injection into an InGaAs/GaAs based quantum well light emitting diode is realized by using a perpendicularly magnetized MgO/CoFeB/Ta/CoFeB/MgO spin injector. We demonstrate that the Ta interlayer plays an important role to establish the perpendicular magnetic anisotropy and the thickness of Ta interlayer determines the type of exchange coupling between the two adjacent CoFeB layers. They are ferromagnetically or antiferromagnetically coupled for a Ta thickness of 0.5 nm or 0.75 nm, respectively. A circular polarized electroluminescence (Pc) of about 10% is obtained at low temperature and at zero magnetic field. The direction of the electrically injected spins is determined only by the orientation of the magnetization of the bottom CoFeB layer which is adjacent to the MgO/GaAs interface. This work proves the critical role of the bottom CoFeB/MgO interface on the spin-injection and paves the way for the electrical control of spin injection via magnetic tunnel junction-type spin injector.
Skip Nav Destination
Article navigation
11 April 2016
Research Article|
April 11 2016
Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector
B. S. Tao;
B. S. Tao
1Institut Jean Lamour, UMR 7198,
CNRS-Université de Lorraine
, BP 70239, 54506 Vandœuvre, France
2Beijing National Laboratory of Condensed Matter Physics, Institute of Physics,
Chinese Academy of Sciences
, Beijing 100190, China
Search for other works by this author on:
P. Barate;
P. Barate
3
Université de Toulouse
, INSA-CNRS-UPS, LPCNO, 135 avenue de Rangueil, 31077 Toulouse, France
Search for other works by this author on:
J. Frougier
;
J. Frougier
4Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud,
Université Paris-Saclay
, 91767 Palaiseau, France
Search for other works by this author on:
P. Renucci;
P. Renucci
3
Université de Toulouse
, INSA-CNRS-UPS, LPCNO, 135 avenue de Rangueil, 31077 Toulouse, France
Search for other works by this author on:
B. Xu;
B. Xu
5Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,
Chinese Academy of Sciences
, P. O. Box 912, Beijing 100083, China
Search for other works by this author on:
A. Djeffal;
A. Djeffal
1Institut Jean Lamour, UMR 7198,
CNRS-Université de Lorraine
, BP 70239, 54506 Vandœuvre, France
Search for other works by this author on:
H. Jaffrès;
H. Jaffrès
4Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud,
Université Paris-Saclay
, 91767 Palaiseau, France
Search for other works by this author on:
J.-M. George;
J.-M. George
4Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud,
Université Paris-Saclay
, 91767 Palaiseau, France
Search for other works by this author on:
X. Marie;
X. Marie
3
Université de Toulouse
, INSA-CNRS-UPS, LPCNO, 135 avenue de Rangueil, 31077 Toulouse, France
Search for other works by this author on:
S. Petit-Watelot;
S. Petit-Watelot
1Institut Jean Lamour, UMR 7198,
CNRS-Université de Lorraine
, BP 70239, 54506 Vandœuvre, France
Search for other works by this author on:
S. Mangin
;
S. Mangin
1Institut Jean Lamour, UMR 7198,
CNRS-Université de Lorraine
, BP 70239, 54506 Vandœuvre, France
Search for other works by this author on:
X. F. Han
;
X. F. Han
2Beijing National Laboratory of Condensed Matter Physics, Institute of Physics,
Chinese Academy of Sciences
, Beijing 100190, China
Search for other works by this author on:
Z. G. Wang;
Z. G. Wang
5Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,
Chinese Academy of Sciences
, P. O. Box 912, Beijing 100083, China
Search for other works by this author on:
a)
Author to whom correspondence should be addressed. Electronic mail: yuan.lu@univ-lorraine.fr
Appl. Phys. Lett. 108, 152404 (2016)
Article history
Received:
February 12 2016
Accepted:
March 29 2016
Citation
B. S. Tao, P. Barate, J. Frougier, P. Renucci, B. Xu, A. Djeffal, H. Jaffrès, J.-M. George, X. Marie, S. Petit-Watelot, S. Mangin, X. F. Han, Z. G. Wang, Y. Lu; Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector. Appl. Phys. Lett. 11 April 2016; 108 (15): 152404. https://doi.org/10.1063/1.4945768
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Sign in via your Institution
Sign in via your InstitutionPay-Per-View Access
$40.00
Citing articles via
Feedback cooling of an insulating high-Q diamagnetically levitated plate
S. Tian, K. Jadeja, et al.
MXene/AlGaN van der Waals heterojunction self-powered photodetectors for deep ultraviolet communication
Linhao Li, Yixun He, et al.
Evolution of electro-induced blood plasma droplets on a superhydrophobic microstructured surface
Kaikai Li, Yingxi Xie, et al.