Spin-Orbit Coupling at the Level of a Single Electron

V. F. Maisi, A. Hofmann, M. Röösli, J. Basset, C. Reichl, W. Wegscheider, T. Ihn, and K. Ensslin
Phys. Rev. Lett. 116, 136803 – Published 30 March 2016

Abstract

We utilize electron counting techniques to distinguish a spin-conserving fast tunneling process and a slower process involving spin flips in AlGaAs/GaAs-based double quantum dots. By studying the dependence of the rates on the interdot tunnel coupling of the two dots, we find that as many as 4% of the tunneling events occur with a spin flip related to spin-orbit coupling in GaAs. Our measurement has a fidelity of 99% in terms of resolving whether a tunneling event occurred with a spin flip or not.

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  • Received 17 December 2015

DOI:https://doi.org/10.1103/PhysRevLett.116.136803

© 2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

V. F. Maisi, A. Hofmann, M. Röösli, J. Basset, C. Reichl, W. Wegscheider, T. Ihn, and K. Ensslin

  • Solid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, Switzerland

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Issue

Vol. 116, Iss. 13 — 1 April 2016

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