Binding energies and structures of two-dimensional excitonic complexes in transition metal dichalcogenides

Daniel W. Kidd, David K. Zhang, and Kálmán Varga
Phys. Rev. B 93, 125423 – Published 18 March 2016

Abstract

The stochastic variational method is applied to excitonic formations within semiconducting transition metal dichalcogenides using a correlated Gaussian basis. The energy and structure of two- to six-particle systems are investigated along with their dependence on the effective screening length of the two-dimensional Keldysh potential and the electron-hole effective mass ratio. Excited state biexcitons are shown to be bound, with binding energies of the L=0 state showing good agreement with experimental measurements of biexciton binding energies. Ground and newly discussed excited state exciton-trions are predicted to be bound and their structures are investigated.

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  • Received 14 January 2016
  • Revised 25 February 2016

DOI:https://doi.org/10.1103/PhysRevB.93.125423

©2016 American Physical Society

Physics Subject Headings (PhySH)

  1. Research Areas
Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Daniel W. Kidd, David K. Zhang, and Kálmán Varga

  • Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA

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Issue

Vol. 93, Iss. 12 — 15 March 2016

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