Charge-tunable indium gallium nitride quantum dots

Lei Zhang, Chu-Hsiang Teng, Pei-Cheng Ku, and Hui Deng
Phys. Rev. B 93, 085301 – Published 1 February 2016

Abstract

III-Nitride quantum dots have emerged as a new chip-scale system for quantum information science, which combines electrical and optical interfaces on a semiconductor chip that is compatible with noncryogenic operating temperatures. Yet most work has been limited to optical excitations. To enable single-spin-based quantum optical and quantum information research, we demonstrate here quantized charging in optically active, site-controlled III-nitride quantum dots. Single-electron charging was confirmed by the voltage dependence of the energy, dipole moment, fine structures, and polarization properties of the exciton states in the quantum dots. The fundamental energy structures of the quantum dots were identified, including neutral and charged excitons, fine structures of excitons, and A and B excitons. The results lay the ground for coherent control of single charges in III-nitride quantum dots, opening a door to III-nitride-based spintronics and spin-qubit quantum information processing.

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  • Received 16 September 2015
  • Revised 17 January 2016

DOI:https://doi.org/10.1103/PhysRevB.93.085301

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Lei Zhang1, Chu-Hsiang Teng2, Pei-Cheng Ku2, and Hui Deng1,*

  • 1Physics Department, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109-1040, USA
  • 2EECS Department, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109-2122, USA

  • *dengh@umich.edu

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Issue

Vol. 93, Iss. 8 — 15 February 2016

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