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Quantum pressure and chemical bonding: Influence of magnetic fields on electron localization

Jianmin Tao, Shi Liu, Fan Zheng, and Andrew M. Rappe
Phys. Rev. B 92, 060401(R) – Published 3 August 2015
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Abstract

Chemical bonding is the central concept of chemistry that has been used to explain the properties of molecules and solids as well as chemical processes. In recent years, considerable progress has been made toward a simple and yet fundamental understanding of this concept for isolated systems. Here we propose the quantum pressure to study electron localization in molecules and solids as well as the influence of an external magnetic field. A high pressure indicates chemical bonding and electron localization, while a low pressure indicates intershell region and electron delocalization. We find that electrons become more localized between nuclei when exposed to a magnetic field. We demonstrate that our quantum pressure not only can reveal electronic shell structure of atoms, but also can be used to visualize chemical bonding in molecules and solids, significantly extending the applicability of this tool to wide-ranging problems.

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  • Received 12 February 2015

DOI:https://doi.org/10.1103/PhysRevB.92.060401

©2015 American Physical Society

Authors & Affiliations

Jianmin Tao*, Shi Liu, Fan Zheng, and Andrew M. Rappe

  • Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6323, USA

  • *jianmint@sas.upenn.edu

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Issue

Vol. 92, Iss. 6 — 1 August 2015

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