Abstract
We measured the in-plane resistivity anisotropy in the underdoped single crystals. The anisotropy (indicated by ) appears below a temperature well above magnetic transition temperature , being positive () as . With increasing the doping level to , an intersection between and is observed upon cooling, with at low temperature deep inside a magnetically ordered state, while at high temperature. Subsequently, further increase of hole concentration leads to a negative anisotropy in the whole temperature range. These results manifest that the anisotropic behavior of resistivity in the magnetically ordered state depends strongly on the competition of the contributions from different mechanisms, and the competition between the two contributions results in a complicated evolution of the anisotropy of in-plane resistivity with doping level.
- Received 2 April 2014
- Revised 19 April 2014
DOI:https://doi.org/10.1103/PhysRevB.89.174512
©2014 American Physical Society