Doping a Correlated Band Insulator: A New Route to Half-Metallic Behavior

Arti Garg, H. R. Krishnamurthy, and Mohit Randeria
Phys. Rev. Lett. 112, 106406 – Published 12 March 2014
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Abstract

We demonstrate in a simple model the surprising result that turning on an on-site Coulomb interaction U in a doped band insulator leads to the formation of a half-metallic state. In the undoped system, we show that increasing U leads to a first order transition at a finite value UAF between a paramagnetic band insulator and an antiferomagnetic Mott insulator. Upon doping, the system exhibits half-metallic ferrimagnetism over a wide range of doping and interaction strengths on either side of UAF. Our results, based on dynamical mean field theory, suggest a new route to half metallicity, and will hopefully motivate searches for new materials for spintronics.

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  • Received 23 July 2013

DOI:https://doi.org/10.1103/PhysRevLett.112.106406

© 2014 American Physical Society

Authors & Affiliations

Arti Garg1, H. R. Krishnamurthy2, and Mohit Randeria3

  • 1Condensed Matter Physics Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064, India
  • 2Centre for Condensed Matter Theory, Department of Physics, Indian Institute of Science, Bangalore 560 012, India and JNCASR, Jakkur, Bangalore 560 064, India
  • 3Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA

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Issue

Vol. 112, Iss. 10 — 14 March 2014

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