We derive an analytical expression for the backaction dephasing rate, which characterizes the disturbance induced by coupling with an environment containing a quantum dot detector (QDD). In this paper, we show in an explicit form that the charge noise induces backaction dephasing. In equilibrium, this backaction dephasing induced by the charge noise can be explained as a relaxation by an inelastic electron-electron scattering in Fermi-liquid theory. Unlike the quantum point contact, the backaction dephasing rate increases or decreases with the bias at low bias and finite-temperature condition. This behavior depends on the QDD energy level with respect to the Fermi energy and the asymmetry of the QDD coupling to the reservoirs. In the high bias voltage regime, the dephasing rate becomes insensitive to the bias because of the saturation of the charge noise.

• Received 10 October 2012

DOI:https://doi.org/10.1103/PhysRevB.88.155402