Anisotropic Fermi contour of (001) GaAs electrons in parallel magnetic fields

D. Kamburov, M. A. Mueed, M. Shayegan, L. N. Pfeiffer, K. W. West, K. W. Baldwin, J. J. D. Lee, and R. Winkler
Phys. Rev. B 88, 125435 – Published 30 September 2013

Abstract

We demonstrate a severe Fermi contour anisotropy induced by the application of a parallel magnetic field to high-mobility electrons confined to a 30-nm-wide (001) GaAs quantum well. We study commensurability oscillations, namely, geometrical resonances of the electron orbits with a unidirectional, surface-strain-induced, periodic potential modulation, to directly probe the size of the Fermi contours along and perpendicular to the parallel field. Their areas are obtained from the Shubnikov-de Haas oscillations. Our experimental data agree semiquantitatively with the results of parameter-free calculations of the Fermi contours, but there are significant discrepancies.

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  • Received 14 June 2013

DOI:https://doi.org/10.1103/PhysRevB.88.125435

©2013 American Physical Society

Authors & Affiliations

D. Kamburov1, M. A. Mueed1, M. Shayegan1, L. N. Pfeiffer1, K. W. West1, K. W. Baldwin1, J. J. D. Lee1, and R. Winkler2,3

  • 1Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
  • 2Department of Physics, Northern Illinois University, DeKalb, Illinois 60115, USA
  • 3Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA

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Vol. 88, Iss. 12 — 15 September 2013

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