Electron delocalization in gate-tunable gapless silicene

Yan-Yang Zhang, Wei-Feng Tsai, Kai Chang, X.-T. An, G.-P. Zhang, X.-C. Xie, and Shu-Shen Li
Phys. Rev. B 88, 125431 – Published 26 September 2013

Abstract

The application of a perpendicular electric field can drive silicene into a gapless state, characterized by two nearly fully spin-polarized Dirac cones owing to both relatively large spin-orbital interactions and inversion symmetry breaking. Here we argue that since intervalley scattering from nonmagnetic impurities is highly suppressed by time-reversal symmetry, the physics should be effectively single-Dirac-cone like. Through numerical calculations, we demonstrate that there is no significant backscattering from a single impurity that is nonmagnetic and unit-cell uniform, indicating a stable delocalized state. This conjecture is then further confirmed from a scaling of conductance for disordered systems using the same type of impurities.

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  • Received 12 February 2013

DOI:https://doi.org/10.1103/PhysRevB.88.125431

©2013 American Physical Society

Authors & Affiliations

Yan-Yang Zhang1,2, Wei-Feng Tsai3,*, Kai Chang1, X.-T. An1, G.-P. Zhang4, X.-C. Xie2, and Shu-Shen Li1

  • 1SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
  • 2ICQM, Peking University, Beijing 100871, China
  • 3Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
  • 4Department of Physics, Renmin University of China, Beijing 100872, China

  • *To whom correspondence should be addressed: wftsai@mail.nsysu.edu.tw

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Vol. 88, Iss. 12 — 15 September 2013

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