Abstract
We report a characterization of surfaces of the dichalcogenide TaSe using scanning tunneling microscopy and spectroscopy at 150 mK. When the top layer has the structure and the layer immediately below the structure, we find a singular spatial dependence of the tunneling conductance below 1 K, changing from a zero-bias peak on top of Se atoms to a gap in between Se atoms. The zero-bias peak is additionally modulated by the commensurate charge-density wave of -TaSe. Multilayers of -TaSe show a spatially homogeneous superconducting gap with a critical temperature also of 1 K. We discuss possible origins for the peculiar tunneling conductance in single layers.
3 More- Received 27 September 2012
DOI:https://doi.org/10.1103/PhysRevB.87.094502
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