Localized States Influence Spin Transport in Epitaxial Graphene

T. Maassen, J. J. van den Berg, E. H. Huisman, H. Dijkstra, F. Fromm, T. Seyller, and B. J. van Wees
Phys. Rev. Lett. 110, 067209 – Published 6 February 2013
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Abstract

We developed a spin transport model for a diffusive channel with coupled localized states that result in an effective increase of spin precession frequencies and a reduction of spin relaxation times in the system. We apply this model to Hanle spin precession measurements obtained on monolayer epitaxial graphene on SiC(0001). Combined with newly performed measurements on quasi-free-standing monolayer epitaxial graphene on SiC(0001) our analysis shows that the different values for the diffusion coefficient measured in charge and spin transport measurements on monolayer epitaxial graphene on SiC(0001) and the high values for the spin relaxation time can be explained by the influence of localized states arising from the buffer layer at the interface between the graphene and the SiC surface.

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  • Received 15 August 2012

DOI:https://doi.org/10.1103/PhysRevLett.110.067209

© 2013 American Physical Society

Authors & Affiliations

T. Maassen1,*, J. J. van den Berg1, E. H. Huisman1, H. Dijkstra1, F. Fromm2, T. Seyller2, and B. J. van Wees1

  • 1Physics of Nanodevices, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
  • 2Lehrstuhl für Technische Physik, Universität Erlangen-Nürnberg, Erwin-Rommel-Strasse 1, 91058 Erlangen, Germany

  • *t.maassen@rug.nl

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Vol. 110, Iss. 6 — 8 February 2013

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