ExLibris header image
SFX Logo
Title: Insulator-to-Metal Transition in Selenium-Hyperdoped Silicon: Observation and Origin
Source:

Physical Review Letters [0031-9007] yr:2012


Collapse list of basic services Basic
Full text
Full text available via American Physical Society Journals
GO
Document delivery
Request document via Library/Bibliothek GO
Users interested in this article also expressed an interest in the following:
1. Newman, Bonna K. "Extended X-ray absorption fine structure spectroscopy of selenium-hyperdoped silicon." Journal of applied physics 114.13: 133507-. Link to SFX for this item
2. Taskin, A. "Formation of selenium-containing complexes in silicon." Semiconductors 36.6 (2002): 605-614. Link to Full Text for this item Link to SFX for this item
3. Sullivan, J T. "Methodology for vetting heavily doped semiconductors for intermediate band photovoltaics: A case study in sulfur-hyperdoped silicon." Journal of applied physics 114.10 (2013): 103701-. Link to SFX for this item
4. Taskin, A. "Formation of Se-2 quasimolecules in selenium-doped silicon." Semiconductors (1998): 1162-. Link to Full Text for this item Link to SFX for this item
5. Zubarev, D. "Chemical bonding in Si-5(2-) and NaSi5- via photoelectron spectroscopy and ab initio calculations." The journal of physical chemistry. A 109.50 (2005): 11385-11394. Link to Full Text for this item Link to SFX for this item
6. Sharma, V. "Performance assessment of different solar photovoltaic technologies under similar outdoor conditions." Energy 58 (2013): 511-518. Link to SFX for this item
7. Seminovski, Y. "Obtaining an intermediate band photovoltaic material through the Bi insertion in CdTe." Solar energy materials and solar cells 114 (2013): 99-103. Link to SFX for this item
8. Fabbri, F. "Depth-resolved cathodoluminescence spectroscopy of silicon supersaturated with sulfur." Applied physics letters 102.3 (2013): 31909-. Link to Full Text for this item Link to SFX for this item
9. Sanchez, K. "Formation of a reliable intermediate band in Si heavily coimplanted with chalcogens (S, Se, Te) and group III elements (B, Al)." Physical review. B, Condensed matter and materials physics 82.16 (2010): 165201-. Link to Full Text for this item Link to SFX for this item
10. ADILOV, KA. "PHOTOCHEMICAL REORGANIZATION OF DEEP IMPURITY CENTERS IN SILICON - DISSOCIATION OF DONOR-ACCEPTOR PAIRS." Physica status solidi. B, Basic research 167.1 (1991): 159-163. Link to Full Text for this item Link to SFX for this item
11. Wilson, R. "Depth Distributions of Sulfur Implanted into Silicon as a Function of Ion Energy, Ion Fluence, and Anneal Temperature." Journal of applied physics 55.10 (1984): 3490-3494. Link to Full Text for this item Link to SFX for this item
12. Cui, L. "Stable icosahedral hollow cage clusters: stannaspherene (Sn-12(2-)) and plumbaspherene (Pb-12(2-))." International reviews in physical chemistry 27.1 (2008): 139-166. Link to SFX for this item
13. Yan, Y. "Doping asymmetry in wide-bandgap semiconductors: Origins and solutions." Physica status solidi. B, Basic research 245.4 (2008): 641-652. Link to Full Text for this item Link to SFX for this item
14. Wiggins, S. "The influence of wavelength on phase transformations induced by picosecond and femtosecond laser pulses in GeSb thin films." Journal of applied physics (2005): 113518-113518. Link to SFX for this item
View More...
View Less...
Select All Clear All

Expand list of advanced services Advanced