Abstract
We investigated LaAlO-SrTiO heterointerfaces grown either in oxygen-rich or -poor atmosphere by soft x-ray spectroscopy. Resonant photoemission across the Ti L absorption edge of the valence band and Ti 2 core-level spectroscopy directly monitor the impact of oxygen treatment upon the electronic structure. Two types of Ti related charge carriers are identified. One is located at the Fermi energy and related to the filling of the SrTiO conduction band. It appears for low oxygen pressure only. The other one is centered at eV and independent of the oxygen pressure during growth. It is probably due to defects. The magnitude of both excitations is comparable. It is shown that low oxygen pressure is detrimental for the Ti-O bonding. Our results shed light on the nature of the charge carriers in the vicinity of the LaAlO-SrTiO interface.
- Received 28 March 2011
DOI:https://doi.org/10.1103/PhysRevB.84.245121
©2011 American Physical Society