Perpendicular ferromagnetic resonance measurements of damping and Landég factor in sputtered (Co2Mn)1xGex thin films

H. T. Nembach, T. J. Silva, J. M. Shaw, M. L. Schneider, M. J. Carey, S. Maat, and J. R. Childress
Phys. Rev. B 84, 054424 – Published 8 August 2011

Abstract

X-ray diffraction (XRD), magnetometry, and ferromagnetic resonance (FMR) measurements were performed on sputtered thin films of the nominal Heusler alloy (Co2Mn)1xGex with varying Ge content and annealing temperatures. XRD indicates some degree of B2 alloy formation, with strong (110) texturing. FMR measurements were performed in a perpendicular geometry that minimized the contribution of two-magnon scattering to the linewidth. The FMR data indicate a significant increase in linewidth for samples that lack a well-defined (220) peak, presumably as a result of inhomogeneous line broadening. Samples annealed at 200 °C exhibit decreasing Landau–Lifshitz damping with increasing Ge content, while samples annealed at 245 and 300 °C have a nonlinear dependence of linewidth on frequency. The nonlinear component of the linewidth data was successfully fit with a generalized theory of slowly relaxing impurities, originally proposed by Van Vleck and Orbach. The modified theory includes the possibility of transverse coherence during the relaxation process. Magnetometry and FMR spectroscopy results were analyzed in the context of Malozemoff's generalized Slater–Pauling (GSP) theory, with the conclusion that the Ge sites support a significant negative-polarized spin density of several tens of percent. The GSP analysis results were consistent with a more conventional analysis of the spectroscopic g-factor that is appropriate for alloys. The proportionality of the strength of the slow-relaxer contribution to the damping suggests that the negatively polarized Ge atoms are acting as the slowly relaxing impurities in question.

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  • Received 3 September 2010

DOI:https://doi.org/10.1103/PhysRevB.84.054424

©2011 American Physical Society

Authors & Affiliations

H. T. Nembach1, T. J. Silva1, J. M. Shaw1, M. L. Schneider2, M. J. Carey3, S. Maat3, and J. R. Childress3

  • 1National Institute of Standards and Technology (NIST), 325 Broadway, Boulder, Colorado 80301
  • 2University of Montana, Dept. of Physics and Astronomy, Missoula, Montana 59812
  • 3Hitachi Global Storage Technologies, 3403 Yerba Buena Road, San Jose, California 95135

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Vol. 84, Iss. 5 — 1 August 2011

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