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Electrospun Polyaniline/Polyethylene Oxide Nanofiber Field Effect TransistorWe report on the observation of field effect transistor (FET) behavior in electrospun camphorsulfonic acid doped polyaniline(PANi)/polyethylene oxide(PE0) nanofibers. Saturation channel currents are observed at surprisingly low source/drain voltages. The hole mobility in the depletion regime is 1.4 x 10(exp -4) sq cm/V s while the 1-D charge density (at zero gate bias) is calculated to be approximately 1 hole per 50 two-ring repeat units of polyaniline, consistent with the rather high channel conductivity (approx. 10(exp -3) S/cm). Reducing or eliminating the PEO content in the fiber is expected to enhance device parameters. Electrospinning is thus proposed as a simple method of fabricating 1-D polymer FET's.
Document ID
20030112247
Acquisition Source
Glenn Research Center
Document Type
Preprint (Draft being sent to journal)
Authors
Pinto, N. J. (Puerto Rico Univ. Humacao, Puerto Rico)
Johnson, A. T. (Pennsylvania Univ. Philadelphia, PA, United States)
MacDiarmid, A. G. (Pennsylvania Univ. Philadelphia, PA, United States)
Mueller, C. H. (Analex Corp. Cleveland, OH, United States)
Theofylaktos, N. (NASA Glenn Research Center Cleveland, OH, United States)
Robinson, D. C. (NASA Glenn Research Center Cleveland, OH, United States)
Miranda, F. A. (NASA Glenn Research Center Cleveland, OH, United States)
Date Acquired
September 7, 2013
Publication Date
July 3, 2003
Subject Category
Electronics And Electrical Engineering
Distribution Limits
Public
Copyright
Public Use Permitted.

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