NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login
Back to Results
Annealing characteristics of amorphous silicon alloy solar cells irradiated with 1.00 MeV protonsAmorphous Si:H and amorphous Si sub x, Ge sub (1-x):H solar cells were irradiated with 1.00 MeV proton fluences in the range of 1.00E14 to 1.25E15 cm (exp -2). Annealing of the short circuit current density was studied at 0, 22, 50, 100, and 150 C. Annealing times ranged from an hour to several days. The measurements confirmed that annealing occurs at 0 C and the initial characteristics of the cells are restored by annealing at 200 C. The rate of annealing does not appear to follow a simple nth order reaction rate model. Calculations of the short-circuit current density using quantum efficiency measurements and the standard AM1.5 global spectrum compare favorably with measured values. It is proposed that the degradation in J sub sc with irradiation is due to carrier recombination through the fraction of D (o) states bounded by the quasi-Fermi energies. The time dependence of the rate of annealing of J sub sc does appear to be consistent with the interpretation that there is a thermally activated dispersive transport mechanism which leads to the passivation of the irradiation induced defects.
Document ID
19910020932
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Abdulaziz, Salman S. (Wayne State Univ. Detroit, MI, United States)
Woodyard, James R. (Wayne State Univ. Detroit, MI, United States)
Date Acquired
September 6, 2013
Publication Date
August 1, 1991
Publication Information
Publication: NASA. Lewis Research Center, Space Photovoltaic Research and Technology Conference
Subject Category
Energy Production And Conversion
Accession Number
91N30246
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Related Records

There are no records associated with this record.
No Preview Available