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Radiation hardness of Ga0.5In0.5 P/GaAs tandem solar cellsThe radiation hardness of a two-junction monolithic Ga sub 0.5 In sub 0.5 P/GaAs cell with tunnel junction interconnect was investigated. Related single junction cells were also studied to identify the origins of the radiation losses. The optimal design of the cell is discussed. The air mass efficiency of an optimized tandem cell after irradiation with 10(exp 15) cm (-2) 1 MeV electrons is estimated to be 20 percent using currently available technology.
Document ID
19910020929
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Kurtz, Sarah R. (Midwest Research Inst. Golden, CO., United States)
Olson, J. M. (Midwest Research Inst. Golden, CO., United States)
Bertness, K. A. (Midwest Research Inst. Golden, CO., United States)
Friedman, D. J. (Midwest Research Inst. Golden, CO., United States)
Kibbler, A. (Midwest Research Inst. Golden, CO., United States)
Cavicchi, B. T. (Spectrolab, Inc., Sylmar CA., United States)
Krut, D. D. (Spectrolab, Inc., Sylmar CA., United States)
Date Acquired
September 6, 2013
Publication Date
August 1, 1991
Publication Information
Publication: NASA. Lewis Research Center, Space Photovoltaic Research and Technology Conference
Subject Category
Energy Production And Conversion
Accession Number
91N30243
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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