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Process research of non-Czochralski silicon materialSimultaneous diffusion of liquid precursors containing phosphorus and boron into dendritic web silicon to form solar cell structures was investigated. A simultaneous junction formation techniques was developed. It was determined that to produce high quality cells, an annealing cycle (nominal 800 C for 30 min) should follow the diffusion process to anneal quenched-in defects. Two ohm-cm n-base cells were fabricated with efficiencies greater than 15%. A cost analysis indicated that the simultansous diffusion process costs can be as low as 65% of the costs of the sequential diffusion process.
Document ID
19870006990
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Campbell, R. B. (Westinghouse Research and Development Center Pittsburgh, PA, United States)
Date Acquired
September 5, 2013
Publication Date
January 1, 1986
Publication Information
Publication: JPL, California Inst. of Tech., Pasadena Proceedings of the 26th Project Integration Meeting
Subject Category
Energy Production And Conversion
Accession Number
87N16423
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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