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Edge-defined film-fed growth of thin silicon sheetsFinite element analysis was used on two length scales to understand crystal growth of thin silicon sheets. Thermal-capillary models of entire ribbon growth systems were developed. Microscopic modeling of morphological structure of melt/solid interfaces beyond the point of linear instability was carried out. The application to silicon system is discussed.
Document ID
19850024130
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Ettouney, H. M. (Mobil Tyco Solar Energy Corp. Waltham, MA, United States)
Kalejs, J. P. (Mobil Tyco Solar Energy Corp. Waltham, MA, United States)
Date Acquired
August 12, 2013
Publication Date
October 1, 1984
Publication Information
Publication: JPL Proc. of the 24th Project Integration Meeting
Subject Category
Energy Production And Conversion
Accession Number
85N32443
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19850024081Collected WorksProceedings of the 24th Project Integration Meeting
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