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Advanced Czochralski silicon growth technology for photovoltaic modulesSeveral economic analyses had indicated that large-diameter, multiple ingot growth using a single crucible with melt replenishment would be required for Cz growth to be economically viable. Based on the results of these analyses, two liquid and two solid feed melt replenishment approaches were initiated. The sequential solid feed melt replenishment approach, which demonstrated elements of technical feasibility is described in detail in this paper. Growth results of multiple ingots (10-cm-diameter, totaling 100 kg; and 15-cm-diameter, totaling 150 kg weight per crucible) are presented. Solar cells were fabricated and analyzed to evaluate the effects of structure and chemical purities as a result of multiple growth. The results indicate that, with semiconductor-grade silicon, feedstock impurity build-up does not seem to degrade cell performance. For polycrystalline cells, the average efficiencies are 15 to 25% lower than those of single crystalline cells. Concerns regarding single crystal yields, crucible quality and growth speed are indicated, and present status and future research thrusts are also discussed.
Document ID
19830006414
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Daud, T.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Kachare, A. H.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
September 4, 2013
Publication Date
September 15, 1982
Subject Category
Energy Production And Conversion
Report/Patent Number
JPL-5101-207
DOE/JPL-1012-70
NASA-CR-169661
NAS 1.26:169661
JPL-PUB-82-35
Accession Number
83N14685
Funding Number(s)
CONTRACT_GRANT: DE-AI01-76ET-20356
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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