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Shallow-homojunction GaAs solar cellsSingle-crystal GaAs shallow-homojunction solar cells on GaAs or Ge substrates, without Ga sub 1-x Al sub x As window layers, that have conversion efficiencies exceeding 20% at AM1 (17% at AMO). Using a simple theoretical model, good fits were obtained between computer calculations and experimental data for external quantum efficiency and conversion efficiency of cells with different values of n+ layer thickness. The calculations not only yield values for material properties of the GaAs layers composing the cells but will also permit the optimization of cell designs for space and terrestrial applications. Preliminary measurements indicate that the shallow-homojunction cells are resistant to electron irradiation. In the best test so far, bombardment with 1 x 10 to the 16th power/sq cm fluence of 1 MeV electrons reduced the short-circuit current by only about 6%.
Document ID
19790024495
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Fan, J. C. C. (Massachusetts Inst. of Tech. Cambridge, MA, United States)
Date Acquired
August 9, 2013
Publication Date
August 1, 1979
Publication Information
Publication: NASA. Lewis Res. Center Solar Cell High Frequency and Radiation Damage, 1979
Subject Category
Energy Production And Conversion
Accession Number
79N32666
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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