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Radiation damage in high-voltage silicon solar cellsThree types of open circuit high voltage solar cells were tested to determine their performance after exposure to 1 MeV electron irradiations. The cells with a relatively deep n-type emitter were more susceptible to radiation damage than other high open circuit high voltage cells. The use of diffused or ion implanted junctions leads to open circuit high voltage cell designs that are less susceptible to radiation damage. These latter two types of cells show degradations that are typical of the 0.1 ohm-cm material from which they are fabricated. Furthermore, exposure to ionizing radiation causes oxide degradation and decreased cell performance in cells that depend on a charged oxide to achieve significant cell properties. Hence, the combination of a charged oxide and a relatively deep n-type emitter is not recommended for incorporation into a cell designed for use in the particulate radiation environment of space.
Document ID
19790024487
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Weinberg, I. (NASA Lewis Research Center Cleveland, OH, United States)
Swartz, C. K. (NASA Lewis Research Center Cleveland, OH, United States)
Weizer, V. G. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 9, 2013
Publication Date
August 1, 1979
Publication Information
Publication: Solar Cell High Efficiency and Radiation Damage, 1979
Subject Category
Energy Production And Conversion
Accession Number
79N32658
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19790024469Collected WorksSolar Cell High Efficiency and Radiation Damage, 1979
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