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Development of InSb charge-coupled infrared imaging devices: Linear imagerThe following results were accomplished in the development of charge coupled infrared imaging devices: (1) a four-phase overlapping gate with 9 transfers (2-bits) and 1.0-mil gate lengths was successfully operated, (2) the measured transfer efficiency of 0.975 for this device is in excellent agreement with predictions for the reduced gate length device, (3) mask revisions of the channel stop metal on the 8582 mask have been carried out with the result being a large increase in the dc yield of the tested devices, (4) partial optical sensitivity to chopped blackbody radiation was observed for an 8582 9-bit imager, (5) analytical consideration of the modulation transfer function degradation caused by transfer inefficiency in the CCD registers was presented, and (6) for larger array lengths or for the insertion of isolated bits between sensors, improvements in InSb fabrication technology with corresponding decrease in the interface state density are required.
Document ID
19760019895
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Phillips, J. D. (Santa Barbara Research Center Goleta, CA, United States)
Date Acquired
September 3, 2013
Publication Date
April 1, 1976
Subject Category
Optics
Report/Patent Number
NASA-CR-145003
Accession Number
76N26983
Funding Number(s)
CONTRACT_GRANT: NAS1-13937
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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