The lattice heating rate has been calculated for GaAs field‐effect transistors of different source‐drain channel design by means of the ensemble Monte Carlo particle model. Transport of carriers in the substrate and the presence of free surface charges are also included in our simulation. The actual heat generation was obtained by accounting for the energy exchanged with the lattice of the semiconductor during phonon scattering. It was found that the maximum heating rate takes place below the surface near the drain end of the gate. The results correlate well with a previous hydrodynamic energy transport estimate of the electronic energy density, but shifted slightly more towards the drain. These results further emphasize the adverse effects of hot electrons on the Ohmic contacts.
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15 August 1995
Research Article|
August 15 1995
Ensemble Monte Carlo particle investigation of hot electron induced source‐drain burnout characteristics of GaAs field‐effect transistors
C. Moglestue;
C. Moglestue
Fraunhofer Institute of Applied Solid State Physics, Tullastrasse 72, D‐79108 Freiburg, Germany
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F. A. Buot;
F. A. Buot
Naval Research Laboratory, Washington, DC 20375
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W. T. Anderson
W. T. Anderson
Naval Research Laboratory, Washington, DC 20375
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J. Appl. Phys. 78, 2343–2348 (1995)
Article history
Received:
August 29 1994
Accepted:
April 25 1995
Citation
C. Moglestue, F. A. Buot, W. T. Anderson; Ensemble Monte Carlo particle investigation of hot electron induced source‐drain burnout characteristics of GaAs field‐effect transistors. J. Appl. Phys. 15 August 1995; 78 (4): 2343–2348. https://doi.org/10.1063/1.360153
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