Humidity-sensitive oscillator fabricated in double poly CMOS technology

https://doi.org/10.1016/0925-4005(90)80246-VGet rights and content

Abstract

We have developed a humidity-sensitive multivibrator fabricated in standard double poly CMOS technology. The output frequency of the multivibrator is modulated by the ambient relative humidity (r.h.) and shows a sensitivity of at least 10 Hz/%r.h. The sensor element, which is an integral part of the circuit, is based on an interdigitated lateral capacitance structure formed by the polysilicon layers of the CMOS process.

Reference (6)

There are more references available in the full text version of this article.

Cited by (9)

  • Novel humidity sensor compatible with CMOS technology

    2004, Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
  • Weather Station on a chip

    2003, Proceedings of IEEE Sensors
  • Capacitive humidity sensor in CMOS technology

    2001, Proceedings of SPIE - The International Society for Optical Engineering
View all citing articles on Scopus
View full text