Silicon μ-strip detectors with SVX chip readout

doi:10.1016/0168-9002(94)90777-3

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volume 348, Issues 2–3, 1 September 1994, Pages 444-448

https://doi.org/10.1016/0168-9002(94)90777-3 Get rights and content

Abstract

A new silicon strip detector has been designed and constructed for a fixed target experiment at CERN. The system of about 30 000 channels is equipped with SVX chips and read out via a double buffer into Fastbus memory. Construction and performance during the actual data taking run are discussed.

References (6)

W.C. Carithers
Nucl. Instr. and Meth. A
(1990)
E. Belau
Nucl. Instr. and Meth.
(1983)
S.A. Kleinfelder
IEEE Trans. Nucl. Sci. NS-35
(1988)

There are more references available in the full text version of this article.

Cited by (5)

Cryogenic operation of silicon detectors
2000, Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
This paper reports on measurements at cryogenic temperatures of a silicon microstrip detector irradiated with 24 GeV protons to a fluence of $3.5×10^{14} p / cm^{2}$ and of a p–n junction diode detector irradiated to a similar fluence. At temperatures below 130 K a recovery of charge collection efficiency and resolution is observed. Under reverse bias conditions this recovery degrades in time towards some saturated value. The recovery is interpreted qualitatively as changes in the effective space charge of the detector causing alterations in the depletion voltage.
Charge collection efficiency and resolution of an irradiated double-sided silicon microstrip detector operated at cryogenic temperatures
2000, Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
This paper presents results on the measurement of the cluster shapes, resolution and charge collection efficiency of a double-sided silicon microstrip detector after irradiation with 24 GeV protons to a fluence of 3.5×10¹⁴ p/cm² and operated at cryogenic temperatures. An empirical model is presented which describes the expected cluster shapes as a function of depletion depth, and is shown to agree with the data. It is observed that the clusters on the p-side broaden if the detector is under-depleted, leading to a degradation of resolution and efficiency. The model is used to make predictions for detector types envisaged for the LHC experiments. The results also show that at cryogenic temperature the charge collection efficiency varies depending on the operating conditions of the detector and can reach values of 100% at unexpectedly low bias voltage. By analysing the cluster shapes it is shown that these variations are due to changes in depletion depth. This phenomenon, known as the “Lazarus effect”, can be related to similar recent observations on diode behaviour.
Determination of the total cc̄ production cross section in 340 GeV/c Σ<sup>-</sup>-nucleus interactions
2000, European Physical Journal C
Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures
1999, IEEE Transactions on Nuclear Science
SPICE evaluation of the S/N ratio for Si microstrip detectors
1999, Nuovo Cimento della Societa Italiana di Fisica A

^∗: Corresponding author.

View full text

Silicon μ-strip detectors with SVX chip readout

Abstract

Nucl. Instr. and Meth. A

Nucl. Instr. and Meth.

IEEE Trans. Nucl. Sci. NS-35