High energy heavy ion irradiation effects in α-Al2O3☆
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Cited by (51)
On the threshold of damage formation in aluminum oxide via electronic excitations
2014, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and AtomsDamage creation threshold of Al <inf>2</inf>O <inf>3</inf> under swift heavy ion irradiation
2012, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and AtomsCitation Excerpt :Based on the results obtained by different physical characterization techniques such as scanning force microscopy, profilometry, and channelling Rutherford backscattering, the mean electronic energy loss threshold value for damage creation in Al2O3 is deduced to be 9.5 ± 1.5 keV/nm. This value is significant smaller than values reported earlier [3–5], although the experimental damage data are quite in agreement. For a correct data analysis it has to be taken into account that the damage saturation level is below unity and depends on the electronic energy loss.
Nanometric transformation of the matter by short and intense electronic excitation: Experimental data versus inelastic thermal spike model
2012, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and AtomsCitation Excerpt :It should be point out that Al2O3 is a material which is difficult to amorphize [96]. regarding its iconicity value (∼0.6 [53]) It presents a threshold of damage creation [97–99] which is quite large as compared to any other insulators [27,59] as suggested [100]. Furthermore it presents also a two step processes in order to reach complete disorder by channeling Rutherford backscattering: first a non-amorphized disorder is observed which is followed by an amorphization coming from the surface that appears only after incubation fluence [101,102].
Structural disorder in sapphire induced by 90.3 MeV xenon ions
2010, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
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Experiments performed at GANIL (Caen).