Ion beam modification of polyacetylene films

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Abstract

Low energy ion implantation of polyacetylene films synthesized with rare earth compound catalysts have been studied for potassium, sodium and iodine at the energy region of 15 to 30 keV. Film samples prepared in different ways, thermally treated and/or chemically doped, were irradiated up to 1 × 1017 ions/cm2. The resulting surface property modifications of the (CH)x films were examined by various kinds of techniques. Compensation effects of the dopants and electrical conductivity changes in the implanted regions were observed. Some of the implanted film samples exhibited diode like characteristics. Discussions on the experimental results are presented.

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