Surface profiling of insulating layers using desorption induced by monatomic or cluster ions of beam diameter in the 5–10 μm range

https://doi.org/10.1016/0168-583X(89)90017-7Get rights and content

Abstract

Collimated beams of Ar ions (9 MeV) and Hn+ clusters (500 keV) have been used to induce secondary emission from insulating or semiconductor layers. A 10 (μm lateral resolution has been obtained with the former particles using a 2 μm diameter microcollimator. Unsuccessful attempts to improve this result with hydrogen clusters are discussed and improvements are suggested. Examples of three-dimensional profiles on various target patterns are presented.

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First presented at the Tenth International Conference on the Application of Accelerators in Research and Industry, Denton, Texas, Nov. 7–9, 1988.

Permanent address: Centre for Energy Research and Development, OBAFEMI AWOLOWO University, Ile Ife, Nigeria.

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