Elsevier

Surface Science Letters

Volume 278, Issues 1–2, 1 November 1992, Pages L141-L146
Surface Science Letters

Si desorption from a ß-SiC(001) surface by an oxygen flux

https://doi.org/10.1016/0167-2584(92)90282-AGet rights and content

Abstract

Silicon desorption from a cubic SiC(001) surface was investigated with an oxygen gas reaction on the surface. Desorption of the topmost Si layer from a silicon-saturated surface at 1050°C is demonstrated by exposure to oxygen. The resultant carbon-terminated surface, however, gave no change in the atomic configuration with oxygen exposure, that is, oxygen acts as an atomic layer etchant not for the carbon toplayer but only for the silicon toplayer.

References (20)

  • A. Suzuki et al.

    J. Cryst. Growth

    (1984)
  • M. Dayan

    Surf. Sci.

    (1985)
    M. Dayan

    J. Vac. Sci. Technol. A

    (1985)
    M. Dayan

    J. Vac. Sci. Technol. A

    (1986)
  • T.M. Parrill et al.

    Surf. Sci.

    (1991)
  • S. Hara et al.

    Surf. Sci. Lett.

    (1990)
  • V.M. Bermudez et al.

    Phys. Rev. B

    (1991)
  • J.M. Powers et al.

    Phys. Rev. B

    (1991)
  • Y. Aoyagi et al.

    Appl. Phys. Lett.

    (1992)
  • M. Balooch et al.

    Surf. Sci.

    (1992)
  • S. Yoshida et al.

    Appl. Phys. Lett.

    (1985)
  • M.-H. Tsai et al.

    Phys. Rev. B

    (1992)
There are more references available in the full text version of this article.

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This work was partially supported by a Grant-in Aid for Scientific Research of the Ministry of Education, Science and Culture, Japan.

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