Contact resistance and surface composition of N - doped Al films

Abstract

N - doped Al films have been grown by reactive sputtering at increasing N₂ partial pressures until a minimum in the contact resistance is obtained. The contact resistance follows an exponential decay with the N₂ pressure. Depth profile analysis of the native oxide layer has been performed, showing a constant oxide thickness and the incorporation of N with an AIN stoichiometry. Results suggest that the increase in the structural defects in the native oxide layer causes a decrease in the effective tunnel thickness.