Spectrum and nature of defects at interfaces of semiconductors with predominant homopolar bonding

doi:10.1016/0039-6028(88)90553-5

Surface Science

Volume 200, Issues 2–3, July 1988, Pages 463-471

https://doi.org/10.1016/0039-6028(88)90553-5 Get rights and content

Abstract

A generalized dangling bond concept enables the interface distributions to be understood as well as Fermi-level pinning at semiconductor interfaces. The essential features of the basic model are symmetry relations connected with the bonding/antibonding respectively donor/accepter character of these intrinsic defects together with a geometrical disorder of the defects involved.

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Spectrum and nature of defects at interfaces of semiconductors with predominant homopolar bonding

Abstract

Progr. Surface Sci.

Surface Sci. Rept.

J. Appl. Phys.

J. Appl. Phys.

Surface Sci.

Festkörperprobleme

J. Vacuum Sci. Technol.

MOS Physics and Technology

Japan J. Appl. Phys.

Solid-State Electron.

J. Appl. Phys.

J. Appl. Phys.

J. Appl. Phys.

Phys. Status Solidi (a)

Phys. Status Solidi (a)

Phys. Halbleiteroberfläche

J. Phys. D (Appl. Phys.)