Strong dopant dependence of implantation defect accumulation and amorphisation in highly doped silicon

doi:10.1016/0375-9601(86)90064-2

Physics Letters A

Volume 116, Issue 8, 7 July 1986, Pages 399-402

https://doi.org/10.1016/0375-9601(86)90064-2 Get rights and content

Abstract

A very strong influence of the dopant material in highly doped silicon on the defect accumulation rate has been found. A boron concentration of 2 at% shifts the amorphisation dose for 80 keV Ne⁺ ions by a factor of more than 10 to about 3 × 10¹⁶ cm^-2 at a RT implantation.

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The dependence of ion-beam enhanced epitaxial growth of amorphous Si layers on impurities either dissolved in the film or present at the film-substrate interface is considered. In the case of ion implanted layers, electrically active dopants, like B, P, As at concentrations above 1 × 10²⁰/cm³, enhance the rate by a factor of 2 with respect to the undoped layer. The enhancement shows also a weak dependence on the dopant concentration. Inert impurities, like Ar, which prevent pure thermal regrowth, do not show any appreciable influence on the ion-beam-induced growth rate. Chemical vapor deposited Si layers with a thin native interfacial oxide layer can also be epitaxially regrown under ion irradiation. A critical fluence is needed before the interfacial oxide breaks down and broadens, allowing the epitaxial crystallization to take place. This process is characterized by an activation energy of 0.44 eV. The complex phenomenon of ion-beam-induced crystallization involves a dynamical interaction between production and annealing of point defects. The presence of electrically active dopants probably influences the lifetime of point defects. Impurities which prevent thermal regrowth are instead dissolved by ballistic effects and/or radiation-enhanced mixing.
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Strong dopant dependence of implantation defect accumulation and amorphisation in highly doped silicon

Abstract

J. Phys. Chem. Sol.

Radiat. Eff.