Electrical resistivity of amorphous Hf1−xTaxFe2 alloys

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Abstract

Electrical resistivity of vapor-quenched itinerant-electron ferromagnetic amorphous Hf1−xTaxFe2 alloys for 0 ≦ x ≦ 1 has been measured from 4.2 to 300 K. The temperature coefficient of the resistivity (TCR) systematically increases with increasing Ta concentration x above the Curie temperature TC. Below TC the TCR clearly becomes negative for all the alloys. The amount increased below TC in the resistivity is proportional to the square of the spontaneous magnetization at 0 K. These results suggest that the main part of the temperature dependence is due to magnetic scattering of the conduction electron.

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