Heavy carbon doping in low-pressure metalorganic vapor phase epitaxy of GaAs using trimethylarsenic — a comparison between the carrier gases N2 and H2
References (25)
- et al.
J. Crystal Growth
(1991) - et al.
J. Crystal Growth
(1993) - et al.
J. Crystal Growth
(1992) - et al.
J. Crystal Growth
(1986) - et al.
J. Crystal Growth
(1988) - et al.
J. Crystal Growth
(1992) - et al.
Appl. Phys. Lett.
(1990) - et al.
J. Appl. Phys.
(1990) - et al.
J. Appl. Phys.
(1990) - et al.
J. ELectron. Mater.
(1989)
J. Electrochem. Soc.
(1972)
J. Electron. Mater.
(1986)
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Copyright © 1994 Published by Elsevier B.V.