Heavy carbon doping in low-pressure metalorganic vapor phase epitaxy of GaAs using trimethylarsenic — a comparison between the carrier gases N2 and H2

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Abstract

The carbon doping behavior of trimethylarsenic (TMAs) in low-pressure metalorganic vapor phase epitaxy (LP-MOVPE) of GaAs was studied in the temperature range of 550 to 700°C and at various trimethylarsenic/trimethylgallium (TMAs/TMGa) ratios using the carrier gas N2 in comparison to the standard H2. At a growth temperature as high as 600°C, perfectly specular layers with a hole concentration equaling the carbon concentration of 1.7 × 1020 cm-3 and a mobility of 55 cm2/V·s were achieved for the carrier gas nitrogen. This is the highest fully active carbon concentration ever reported for MOVPE material, to our knowledge, and more than double the hole concentration obtained for the carrier hydrogen under the same growth conditions. This result indicates that the carrier N2 is better suited for heavy carbon doping with TMAs at such a high growth temperature as 600°C than the carrier H2, and is therefore more compatible to growth requirements for (AlGa)As/GaAs heterostructures than H2. A method is introduced with which the acceptors are activated without post-growth anneal.

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