Abstract.
A RF-superimposed dc-magnetron sputter process for coating color filter materials with transparent and conducting ITO films was investigated. In this process, the sputtering cathode is excited simultaneously by dc- and RF-power (at 13.56 MHz). This work summarises the measured properties of the gas discharge. Some basic data of the deposited ITO films are given, also. The dependence of the RF portion of the total sputtering power on the discharge voltage has been monitored for different values of total power and process pressure. The ion energy distribution function of the positively charged ions approaching the substrate surface has been measured using a retarding field plasma analyser probe. It was shown that the mean energy of the ions increases with increasing RF portion of the total power. The electron temperature in the body region of the gas discharge has been derived from measurements of the optical emission of the excited species.
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Received: 3 November 1998 / Accepted: 8 March 1999 / Published online: 14 July 1999
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Bender, M., Trube, J. & Stollenwerk, J. Characterization of a RF/dc-magnetron discharge for the sputter deposition of transparent and highly conductive ITO films. Appl Phys A 69, 397–401 (1999). https://doi.org/10.1007/s003390051021
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DOI: https://doi.org/10.1007/s003390051021