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Structural and optical studies of the discontinuous behaviour of Te thin films subjected to He implantation

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Abstract

Electron microscopy investigations of tellurium thin films implanted with singly ionized He ions have revealed the appearance of a large number of surface structures when N s, the number of implanted ions per unit area within the films, exceeds 0.2×1015 ions/cm2 at a beam energy of 32 keV. This coincides with an observed discontinuity in the optical properties of the Te thin films and with a sudden decrease in the degree of orientation of the thin films as measured by X-ray diffraction. The same type of behaviour is observed for implantations with variable ion-beam energies and a fixed N s of 0.5×1015 He ions/cm2, with a discontinuity apparent near a value of 30 keV.

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Authors and Affiliations

  1. Centre d'Optique Photonique et Laser, Départment de Physique, Université Laval, Cité Universitaire, G1K 7P4, Québec, Canada

    J. Beauvais, R. A. Lessard & E. J. Knystautas

  2. Institut National d'Optique, 369 rue Franquet, G1V 4C5, Ste-Foy, Québec, Canada

    P. Galarneau

Authors
  1. J. Beauvais
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  2. R. A. Lessard
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  3. P. Galarneau
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  4. E. J. Knystautas
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Beauvais, J., Lessard, R.A., Galarneau, P. et al. Structural and optical studies of the discontinuous behaviour of Te thin films subjected to He implantation. Appl. Phys. A 53, 249–254 (1991). https://doi.org/10.1007/BF00324260

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  • DOI: https://doi.org/10.1007/BF00324260

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