Abstract
Liquid phase epitaxy (LPE) is applied to seal small bore-holes (diameter 250–400 μm) in Si crystals by lateral overgrowth. The overgrowth layers have a typical thickness of 20 μm, are mechanically stable and gas-tight. Using Ga as solvent for the LPE process the overgrowth can be performed at temperatures as low as 560°C.
Article PDF
Similar content being viewed by others
References
J. Götzlich: Phys. Blätter 44, 391 (1988)
L. Csepregni: Microelectron. Engin. 3, 221 (1985)
S. Vepřek, Z. Iqbal, H.R. Oswald, A. Webb: J. Phys. C 14, 295 (1981)
T. Ohmi, K. Matsudo, T. Shibata, T. Ichikawa, H. Iwabuchi: Appl. Phys. Lett. 53, 364 (1988)
P.D. Greene: In ISSCG (6th International Summer School on Crystal Growth, Lecture Notes Vol. 1, Edinburgh, 1986) p. 187
R. Linnebach, E. Bauser: J. Cryst. Growth 57, 43 (1982)
D. Käss, M. Warth, W. Appel, H.-P. Strunk, E. Bauser: In Silicon Molecular Epitaxy, ed. by J.C. Bean (The Electrochemical Soc., Pennington 1985) Proc. Vol. 87-7, p. 250
E. Bauser: In Thin Film Techniques for Low-Dimensional Structures, ed. by R.F.C. Farrow, S.S.P. Parkin, P.J. Dobson, J.H. Neave, A.S. Arrott (Plenum, New York 1987) p. 171
E. Bauser, D. Käss, M. Warth, H.-P. Strunk: In Thin Film Interfaces and Phenomena, ed. by R.J. Nemanich, P.S. Lou (Mat. Res. Soc., Pittsburgh 1986) Symp. Proc. Vol. 54, p. 267
E. Bauser, M. Frik, K.S. Löchner, L. Schmidt, R. Ulrich: J. Cryst. Growth 27, 148 (1974)
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Würschum, R., Bauser, E., Queisser, H.J. et al. Sealing of bore-holes in Si crystals by epitaxial overgrowth below 560° C. Appl. Phys. A 50, 583–585 (1990). https://doi.org/10.1007/BF00323451
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF00323451