Abstract
The band structure and the optical transitions of symmetric ultra-short period (GaAs) m /(AlAs) n superlattices (n=m is the number of monolayers) have been studied using different spectroscopic techniques, namely photoacoustic spectroscopy, reflectivity and luminescence, photoluminescence excitation and high excitation intensity time-resolved luminescence. Direct observation of the transition from type I to type II energy band alignment is reported for superlattices whose configuration consists of more than 12 monolayers (i.e. m=n>12). The radiative recombination processes associated with the real space indirect transitions have been investigated as a function of the density of photogenerated electron-hole pairs, revealing an unusual density-dependent behaviour. A tentative interpretation in terms of a condensed electron-hole state at the indirect gap is given, which accounts for the long decay time of the type II luminescence at high excitation rate.
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Cingolani, R., Ploog, K., Baldassarre, L. et al. Spectroscopic studies of real space indirect symmetric GaAs/AlAs short period superlattices. Appl. Phys. A 50, 189–196 (1990). https://doi.org/10.1007/BF00343417
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DOI: https://doi.org/10.1007/BF00343417