Skip to main content
SpringerLink
Log in

The role of the interfacial SiOx layer in SnO2/n-Si photocells

  • Contributed Papers
  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

It is proposed that the charge transport across the SiO x layer at the interface SnO2/Si proceeds by a hopping mechanism. During heat treatment of the photovoltaic cells, in air, chemical reactions occur with O2/H2O, which lead to a drastic reduction of the density of hopping sites near the Si conduction band edge. The SiO x hopping sites of energy near the valence band edge are less affected by these chemical reactions. Thus, photogenerated holes can still pass the barrier while the dark current flow is strongly inhibited.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. D.L. Pulfrey: IEEE Trans. ED-25, 1308 (1978)

    Google Scholar 

  2. S.J. Fonash:Solar Cell Device Physics (Academic Press, New-York 1981)

    Google Scholar 

  3. W. Badawy, F. Decker, K. Doblhofer: Solar Eng. Mater.8, 363 (1983)

    Google Scholar 

  4. H.P. Maruska, A.K. Gosh, D.J. Eustace, T. Feng: J. Appl. Phys.54, 2489 (1983)

    Google Scholar 

  5. T.R. Nash, R.L. Anderson: IEEE Trans. ED-24, 468 (1977)

    Google Scholar 

  6. S.M. Goodnick, J.F. Wagner, C.W. Wilmssen: J. Appl. Phys.51, 527 (1980)

    Google Scholar 

  7. O.P. Agnihotri, B.K. Gupta:Solar Selective Surfaces (Wiley, New York 1981) Chap. 3

    Google Scholar 

  8. J. Sewchun, J. DuBow, A. Myszkowski, R. Singh: J. Appl. Phys.49, 855 (1978)

    Google Scholar 

  9. K.K. Ng, H.C. Card: J. Appl. Phys.51, 2153 (1980)

    Google Scholar 

  10. H. Overhof: Hopping Conductivity in Disordered Solids inFestkörperprobleme 16, 239 (Vieweg, Braunschweig 1976)

    Google Scholar 

  11. S. Kar, S. Ashok, S.J. Fonash: J. Appl. Phys.51, 3417 (1980)

    Google Scholar 

  12. R. Williams: J. Vac. Sci. Technol.14, 1106 (1977)

    Google Scholar 

  13. E.E. Aspnes, J.B. Theeten: J. Electrochem. Soc.127, 1359 (1980)

    Google Scholar 

  14. J.P. Ponpon, R. Stuck, P. Siffert: In Proc. 12th IEEE Photo. Spec. Conf. (1976) p. 900

  15. M. Schulz: InInsulating Films on Semiconductors (1979) (Institute of Physics, Bristol 1980) pp. 75–80

    Google Scholar 

  16. Dieter Schmeisser: Private communication

  17. M.A. Green: Appl. Phys. Lett.33, 178 (1978)

    Google Scholar 

Download references

Author information

Author notes

  1. W. Badawy

    Present address: Chemistry Department, Faculty of Science, Cairo University, Cairo, Egypt

Authors and Affiliations

  1. Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-1000, Berlin 33

    W. Badawy & K. Doblhofer

Authors
  1. W. Badawy
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. K. Doblhofer
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Badawy, W., Doblhofer, K. The role of the interfacial SiOx layer in SnO2/n-Si photocells. Appl. Phys. A 35, 189–192 (1984). https://doi.org/10.1007/BF00616973

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00616973

PACS

Search

Navigation