Abstract
The relaxation of photoexcited carriers in a-Si and a-GaAs has been studied with subpicosecond time resolution by excite-and-probe experiments. The measured time dependence of the induced reflectivity and absorption reveals that the initial trapping of mobile carriers in high-defect-density materials occurs on a subpicosecond time scale.
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Kuhl, J., Göbel, E.O., Pfeiffer, T. et al. Subpicosecond carrier trapping in high-defect-density amorphous Si and GaAs. Appl. Phys. A 34, 105–110 (1984). https://doi.org/10.1007/BF00614761
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DOI: https://doi.org/10.1007/BF00614761