Abstract
A method is presented for avoiding the dislocation generation in (100) silicon implanted with phosphorus doses up to 5×1015 ions/cm2 at 50 keV. The residual defects after the damage anneal are considerably reduced if the phosphorus implant is combined with a low dose, e.g. 1×1014 ions/cm2, antimony implant which produces a deeper surface layer of amorphous silicon. It is essential that the phosphorus ions are implanted shallower than the antimony ions, and come to rest within the amorphous layer. Subsequent thermal annealing proceeds by a solid phase epitaxial regrowth mechanism.
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References
M.Tamura: Appl. Phys. Lett.23, 651–653 (1973)
T.Ikeda, M.Tamura, N.Yoshihiro, T.Tokuyama: J. Japan. Soc. Appl. Phys. Suppl.44, 311–316 (1975)
M.Tamura, N.Yoshihiro, T.Tokuyama: Appl. Phys.17, 31–39 (1978)
N.Yoshihiro, M.Tamura, T.Tokuyama:Ion Implantation in Semiconductors, ed. by S.Namba (Plenum Press, New York 1975) pp. 571–576
M.Tamura: Phil. Mag.35, 663–691 (1977)
T.H.Yeh, M.L.Joshi: J. Electrochem. Soc.116, 73–77 (1969)
R.B.Fair: J. Electrochem. Soc.125, 923–926 (1978)
J.Washburn, G.Thomas, H.J.Queisser: J. Appl. Phys.35, 1909–1914 (1964)
E.T.Yen, B.J.Masters, R.Kastl:Ion Implantation in Semiconductors, ed. by S.Namba (Plenum Press, New York 1975) pp. 501–509
F.F.Morehead, B.L.Crowder:Ion Implantation, ed. by F.H.Eisen and L.T.Chadderton (Gordon and Breach, London 1971) pp. 25–30
K.Uda, M.Kamoshida: J. Appl. Phys.48, 18–21 (1977)
B.L.Crowder: J. Electrochem. Soc.118, 943–952 (1971)
L.Csepregi, J.W.Mayer, T.W.Sigmon: Phys. Lett. A54, 157–158 (1975)
L.D.Glowinski, K.N.Tu, P.S.Ho: Appl. Phys. Lett.28, 312–313 (1976)
Y.Tamminga, W.J.M.J.Josquin: Appl. Phys. Lett.32, 13–15 (1978)
A.Bohg: Phys. Stat. Sol (a)46, 445–450 (1978)
L.Csepregi, E.F.Kennedy, T.J.Gallagher, J.W.Mayer, T.W.Sigmon: J. Appl. Phys.48, 4234–4240 (1977)
L.Csepregi, J.W.Mayer, T.W.Sigmon: Appl. Phys. Lett.29, 92–93 (1976)