Abstract
Channeling effect and sheet resistivity techniques have been used to investigate the damage induced by 40 keV Pb implantation in Ge crystals. At 450° the reordering of the Ge lattice occurs simultaneously to the out-diffusion of the implanted Pb atoms while the recovery of the sheet resistivity occurs at higher temperatures. 90% of the implanted atoms still retained in the crystal are located in substitutional sites.
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Work supported in part by Centro Siciliano di Fisica Nucleare e di Structura della Materia and by Gruppo Nazionale di Struttura della Materia del Consiglio Nazionale delle Ricerche.
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Campisano, S.U., Baeri, P., Ciavola, G. et al. Lattice reordering in Pb implanted Ge crystals. Appl. Phys. 13, 101–103 (1977). https://doi.org/10.1007/BF00890728
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DOI: https://doi.org/10.1007/BF00890728