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Cathodoluminescence depth analysis in SiO2-Si-systems

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Abstract

SEM cathodoluminescence (CL) is extended to luminescence center spatial depth profiling by means of electron beam energy E0 variation and consequently variation of CL excitation range. In this way the CL profile of SiO2-layers on Si substrate offers a dead layer of luminescence beneath the surface (10–75) nm as well as the SiO2 oxide thickness with an accuracy of better 10% across a small spot area of less than 1 μm.

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Authors and Affiliations

  1. Fachbereich Physik, Universität Rostock, Universitätsplatz 3, D-18051 Rostock, Germany, , , , , , DE

    M. Goldberg, T. Barfels & H.-J. Fitting

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  1. M. Goldberg
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  2. T. Barfels
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  3. H.-J. Fitting
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Received: 15 July 1997 / Revised: 15 January 1998 / Accepted: 17 January 1998

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Goldberg, M., Barfels, T. & Fitting, HJ. Cathodoluminescence depth analysis in SiO2-Si-systems. Fresenius J Anal Chem 361, 560–561 (1998). https://doi.org/10.1007/s002160050947

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  • DOI: https://doi.org/10.1007/s002160050947

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