Abstract
Silicon-on-insulator structures were prepared by exfoliating a thin layer from a silicon wafer owing to hydrogen implantation, transferring this layer to another substrate, and bonding to it. The influence of hydrogen and the doping level in the original wafers on the free-carrier concentration and the conductivity type in the split-off silicon layer was investigated. A high boron concentration in the original material, together with a high concentration of residual hydrogen in the silicon layer exfoliated from the wafer, was shown to result in n-type conduction, which is retained up to annealing temperatures of 1100°C in these structures. A decrease in the residual hydrogen concentration owing to additional annealing creates the conditions under which the conductivity of resulting structures corresponds to the conductivity type of the original material.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 9, 2000, pp. 1095–1098.
Original Russian Text Copyright © 2000 by Antonova, Stas’, Popov, Obodnikov, Gutakovski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\).
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Antonova, I.V., Stas’, V.F., Popov, V.P. et al. Electrical conductivity of silicon-on-insulator structures prepared by bonding silicon wafers to a substrate using hydrogen implantation. Semiconductors 34, 1054–1057 (2000). https://doi.org/10.1134/1.1309421
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DOI: https://doi.org/10.1134/1.1309421